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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5256DVP-45XL	文件：63.41 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：63.41 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-55LL	文件：63.41 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：63.41 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-55LL	文件：160.95 Kbytes Page：8 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：160.95 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
M5M5256DVP-55XL	文件：63.41 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：63.41 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-70G	文件：165.4 Kbytes Page：8 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：165.4 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
M5M5256DVP-70GI	文件：165.4 Kbytes Page：8 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：165.4 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
M5M5256DVP-70LL	文件：63.41 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：63.41 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-70VLL	文件：62.57 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：62.57 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-70VLL-I	文件：43.85 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：43.85 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-70VLL-W	文件：47.02 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：47.02 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
上海市鑫鸿达电子	M5M5256DFP-70GI	RENESAS/瑞萨	2022+		150	全新原装货期两周	询价
深圳市福安瓯科技有限公司	M5M5256BVP-70L	MITSUBISHI	25+	QFP	1000	强调现货,随时查询!	询价
深圳市欧立现代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
深圳市佳鑫美电子科技有限公司	M5M5V408BTP70H	MITSUMI	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
千层芯半导体(深圳)有限公司	M5M5165P-10L	MIT	24+	DIP	18700		询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价
深圳市欧亚佳电子有限公司	M5M5165P-15	MITSUBISHI	20+	DIP28	11520	特价全新原装公司现货	询价

更多M5M5供应商更新时间2026-1-31 9:50:00

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