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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5256DVP-70VXL	文件：62.57 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：62.57 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-70VXL-I	文件：43.85 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：43.85 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-70XG	文件：165.4 Kbytes Page：8 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：165.4 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
M5M5256DVP-70XL	文件：63.41 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：63.41 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-85VLL	文件：62.57 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：62.57 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-85VLL-I	文件：43.85 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：43.85 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-85VXL	文件：62.57 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：62.57 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-85VXL-I	文件：43.85 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：43.85 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-85VXL-W	文件：47.02 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：47.02 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256FP	文件：454.1 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM??? 文件：454.1 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤科源兴科技有限公司	M5M5256DVP-70GI	RENESAS	13+		2038	原装分销	询价
深圳市羿芯诚电子有限公司	M5M5408FP-70LL	MITSUBISHI/三菱电机	24+	SOP	3000	全新原装现货优势库存	询价
深圳市威尔健半导体有限公司	M5M5W816WG-55HI其他被动元件	RENESAS/瑞萨	23+	BGA	2680		询价
深圳市明嘉莱科技有限公司	M5M5256DFP-70GI#SM	RENESAS/瑞萨	25+	SOP28	860000	明嘉莱只做原装正品现货	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳庞田科技有限公司	M5M5V108DKV-70H其他被动元件	RENESAS/瑞萨	2023+	TSOP32	11000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市凌旭科技有限公司	M5M5V408BTP-70HI	RENESAS	2016+	TSOP32	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市宏世佳电子科技有限公司	M5M51008AFP-10LL	MITSUBISHI	2025+	SOP-32	3550	全新原厂原装产品、公司现货销售	询价
深圳市晨豪科技有限公司	M5M5W816WG-55HI/R1LV0816A	RENESAS/瑞萨	23+	BGA-48	89630	当天发货全新原装现货	询价
深圳市益百分电子有限公司	M5M51008DVP-70H	MIT	TSSOP3	06+	39	全新原装进口自己库存优势	询价

更多M5M5供应商更新时间2026-1-31 9:01:00

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