M5M5技术资料参数供应商报价三菱电机第34页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5256DVP-10VXL-I	文件：44.18 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：44.18 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-12VLL	文件：63.02 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：63.02 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-12VLL-I	文件：44.18 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：44.18 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-12VXL	文件：63.02 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：63.02 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-12VXL-I	文件：44.18 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：44.18 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-15VLL	文件：63.02 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：63.02 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-15VLL-I	文件：44.18 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：44.18 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-15VXL	文件：63.02 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：63.02 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-15VXL-I	文件：44.18 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre 文件：44.18 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256DVP-45LL	文件：63.41 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur 文件：63.41 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市福安瓯科技有限公司	M5M5256BVP-70L	MITSUBISHI	25+	QFP	1000	强调现货,随时查询!	询价
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市佳鑫美电子科技有限公司	M5M5V408BTP70H	MITSUMI	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市英科美电子有限公司	M5M5V108DKV-70H	RENESAS/瑞萨	2223+	TSSOP32	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
齐创科技(上海,北京,青岛)有限公司	M5M5W816WG-55HI	RENESAS	23+	BGA	60000	原装正品,假一罚十	询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价
深圳市乐峰达科技有限公司	M5M5165P-10L	MIT	25+	DIP	16850	全新原装正品、可开增票、可溯源、一站式配单	询价

更多M5M5供应商更新时间2026-1-31 9:08:00

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