M5M5技术资料参数供应商报价三菱电机第40页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5256RV-45LL-W	文件：46.66 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：46.66 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-45XL-I	文件：44.92 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：44.92 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-45XL-W	文件：46.66 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：46.66 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-55LL-I	文件：44.92 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：44.92 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-55LL-W	文件：46.66 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：46.66 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-55XL-I	文件：44.92 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：44.92 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-55XL-W	文件：46.66 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：46.66 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-70LL-I	文件：44.92 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：44.92 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-70LL-W	文件：46.66 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：46.66 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256RV-70XL-I	文件：44.92 Kbytes Page：7 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by 文件：44.92 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	M5M5256DFP-70XL	MIT	1215+	SOP28	150000	全新原装,绝对正品,公司大量现货供应.	询价
上海专毅电子科技有限公司	M5M51008BFP-70LL	MIT	17+	SOP	9700	只做全新进口原装,现货库存	询价
深圳市华来深电子有限公司	M5M51008DKV-70HISTOX	RENESAS	23+	TSSOP	8560	受权代理!全新原装现货特价热卖!	询价
千层芯半导体(深圳)有限公司	M5M51008DVP-55HI	RENESAS	24+	SOP	30617	一级代理全新原装热卖	询价
深圳市福田区亿兴成电子商行	M5M5165P-10L	MIT	DIP	6688	114	现货库存	询价
深圳市锐视安科技有限公司	M5M51008DFP-70H	RENESAS/瑞萨	02+	SOP32	156	原装正品现货,可开发票,假一赔十	询价
深圳市金芯阳科技有限公司	M5M51008BFP-70LL	MITSUBI	24+	SOP32	5850	进口原装原管	询价
芯有半导体（深圳）有限公司	M5M51008DFP-70H	MIT	09+	SOP32	398	你要真正原装就找我们	询价
深圳市瑞祥辉半导体有限公司	M5M5165P-10L	MIT	2308+	DIP	6859	十年专业专注优势渠道商正品保证公司现货	询价
深圳市信佳源电子有限公司	M5M51008DFP-70HI	RENESAS/瑞萨	10+	SOP32	392	原装/现货	询价

更多M5M5供应商更新时间2026-1-31 11:04:00

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