InGAP HBT Gain Block TM

The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired

文件：149.47 Kbytes 页数：6 Pages

MICROSEMI

美高森美

InGAP HBT Gain Block TM

The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired

文件：149.47 Kbytes 页数：6 Pages

MICROSEMI

美高森美

InGAP HBT Gain Block TM

Microchip

微芯科技

WLAN Power Amplifiers (PA)

Key Features: Advanced InGaP HBT DC to 6 GHz Operation Single Supply Low Idle Current (10 - 35 mA) Small Signal Gain ~ 9 dB at 6 GHz P1dB ~ 8 dBm at 6 GHz SOT-23 Package Description: The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipo

Microchip

微芯科技