LMG3522R030RQSR

LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •

LMG3522R030

LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque

LMG3522R030

LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •

LMG3522R030RQST

LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •