LMG3526R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.88991 Mbytes 页数：44 Pages

TI

德州仪器

丝印：LMG3526R050；Package：VQFN；LMG3526R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.88991 Mbytes 页数：44 Pages

TI

德州仪器

丝印：LMG3526R050；LMG3526R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.88991 Mbytes 页数：44 Pages

TI

德州仪器

具有集成驱动器、保护和零电压检测报告功能的 650V 50mΩ GaN FET

LMG3526R050 GaN FET 具有集成式驱动器和保护功能，适用于开关模式电源转换器，可让设计人员实现更高水平的功率密度和效率。\n\n LMG3526R050 集成了一个硅驱动器，可实现高达 150V/ns 的开关速度。与分立式硅栅极驱动器相比，TI 的集成式精密栅极偏置可实现更高的开关 SOA。这种集成特性与 TI 的低电感封装技术相结合，可在硬开关电源拓扑中提供干净的开关和超小的振铃。可调栅极驱动强度允许将压摆率控制在 15V/ns 至 150V/ns 之间，这可用于主动控制 EMI 并优化开关性能。\n\n高级功能包括数字温度报告、故障检测和零电压检测 (ZVD)。GaN FE • 具有集成栅极驱动器的 650V GaN-on-Si FET \n• 200V/ns FET 释抑\n• 15-V/ns 至 150V/ns 压摆率，用于优化开关性能和缓解 EMI\n• 强大的保护 \n• 硬开关时可承受 720V 浪涌\n• 高级电源管理 \n• 顶部冷却 12mm × 12mm VQFN 封装将电气路径和散热路径分开，可实现更低的电源环路电感\n• 有助于实现软开关转换器的零电压检测功能;

TI

德州仪器