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型号	下载订购	功能描述	制造商上传企业	LOGO
LMG3522R030	文件：2.43235 Mbytes Page：39 Pages	LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • 文件：2.43235 Mbytes 页数：39 Pages	TI 德州仪器	TI
LMG3522R030	文件：2.9582 Mbytes Page：43 Pages	LMG3522R030-Q1 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching freque 文件：2.9582 Mbytes 页数：43 Pages	TI 德州仪器	TI
LMG3522R030	文件：3.23868 Mbytes Page：59 Pages	LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust 文件：3.23868 Mbytes 页数：59 Pages	TI 德州仪器	TI
LMG3522R030RQSR	文件：3.23868 Mbytes Page：59 Pages	丝印：LMG3522R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust 文件：3.23868 Mbytes 页数：59 Pages	TI 德州仪器	TI
LMG3522R030RQSR	文件：2.43235 Mbytes Page：39 Pages	丝印：LMG3522R030；Package：VQFN；LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • 文件：2.43235 Mbytes 页数：39 Pages	TI 德州仪器	TI
LMG3522R030RQSR.A	文件：3.23868 Mbytes Page：59 Pages	丝印：LMG3522R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust 文件：3.23868 Mbytes 页数：59 Pages	TI 德州仪器	TI
LMG3522R030RQSRG4	文件：3.23868 Mbytes Page：59 Pages	丝印：LMG3522R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust 文件：3.23868 Mbytes 页数：59 Pages	TI 德州仪器	TI
LMG3522R030RQSRG4.A	文件：3.23868 Mbytes Page：59 Pages	丝印：LMG3522R030；Package：VQFN(RQS)；LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust 文件：3.23868 Mbytes 页数：59 Pages	TI 德州仪器	TI
LMG3522R030RQST	文件：2.43235 Mbytes Page：39 Pages	丝印：LMG3522R030；Package：VQFN；LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • 文件：2.43235 Mbytes 页数：39 Pages	TI 德州仪器	TI
LMG3522R030-Q1	文件：2.43235 Mbytes Page：39 Pages	LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • 文件：2.43235 Mbytes 页数：39 Pages	TI 德州仪器	TI

技术参数

RDS(on) (mΩ)：
30
ID (max) (A)：
55
Features：
Cycle-by-cycle overcurrent protection
Rating：
Automotive
Operating temperature range (°C)：
-40 to 150
封装：
VQFN (RQS)
引脚：
52
尺寸：
144 mm² 12 x 12

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市恒科翔业电子有限公司	LMG3522R030	TI德州仪器	22+		24000	原装正品现货,实单可谈,量大价优	询价
深圳市万佳诚业科技有限公司	LMG3522R030RQSR	TI(德州仪器)	23+		15000	专业帮助客户找货配单,诚信可靠!	询价
深圳市煦洪科技有限公司	LMG3522R030QRQSRQ1	TI/德州仪器	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市腾胜芯科技有限公司	LMG3522R030QRQSRQ1	TI/德州仪器	25+	原厂封装	10280		询价
深圳市昊天芯诚电子有限公司	LMG3522R030QRQSRQ1	TI/德州仪器	25+	原厂封装	9999		询价
深圳市五行云科技有限公司	LMG3522R030QRQSRQ1	TI/德州仪器	25+	原厂封装	11000		询价
深圳市盈慧通电子有限公司	LMG3522R030RQSR	TI(德州仪器)	2511		4945	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市芯国创科技有限公司	LMG3522R030QRQSRQ1	TI/德州仪器	25+	原厂封装	10280		询价
深圳市科恒伟业电子有限公司	LMG3522R030QRQSRQ1	TI/德州仪器	2450+	VQFN-52	9850	只做原厂原装正品现货或订货假一赔十!	询价
万三科技(深圳)有限公司	LMG3522R030RQSR	TI(德州仪器)	25+	VQFN-52	500000	源自原厂成本,高价回收工厂呆滞	询价

更多LMG3522R030供应商更新时间2026-1-29 15:01:00

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