LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

文件：2.43235 Mbytes 页数：39 Pages

TI

德州仪器

LMG3522R030-Q1 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching freque

文件：2.9582 Mbytes 页数：43 Pages

TI

德州仪器

LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5V to 18V supply • Robust

文件：3.23868 Mbytes 页数：59 Pages

TI

德州仪器

LMG352xR030-Q1 650-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

文件：1.58594 Mbytes 页数：40 Pages

TI

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具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET

LMG3522R030-Q1 GaN FET 具有集成式驱动器和保护功能，适用于开关模式电源转换器，可让设计人员实现更高水平的功率密度和效率。\n\n LMG3522R030-Q1 集成了一个硅驱动器，可实现高达 150V/ns 的开关速度。与分立式硅栅极驱动器相比，TI 的集成式精密栅极偏置可实现更高的开关 SOA。这种集成特性与 TI 的低电感封装技术相结合，可在硬开关电源拓扑中提供干净的开关和超小的振铃。可调栅极驱动强度允许将压摆率控制在 20V/ns 至 150V/ns 之间，这可用于主动控制 EMI 并优化开关性能。\n\n高级电源管理功能包括数字温度报告和故障检测。GaN FET • 符合面向汽车应用的 AEC-Q100 标准 \n• 符合面向硬开关拓扑的 JEDEC JEP180 标准\n• 集成高精度栅极偏置电压\n• 2.2MHz 开关频率\n• 由 12V 非稳压电源供电\n• 强大的保护 \n• 硬开关时可承受 720V 浪涌\n• 高级电源管理 \n• 理想二极管模式可减少 LMG3525R030-Q1 中的第三象限损耗\n• 顶部冷却 12mm × 12mm VQFN 封装将电气路径和散热路径分开，可实现更低的电源环路电感;

TI

德州仪器

LMG3522R030-Q1 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching freque

文件：2.9582 Mbytes 页数：43 Pages

TI

德州仪器