LMG3522R030-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• 650-V GaN-on-Si FET with integrated gate driver

– Integrated high precision gate bias voltage

– 200-V/ns FET hold-off

– 2-MHz switching frequency

– 20-V/ns to 150-V/ns slew rate for optimization

of switching performance and EMI mitigation

– Operates from 7.5-V to 18-V supply

• Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100-ns response

– Withstands 720-V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

• Advanced power management

– Digital temperature PWM output

• Top-side cooled 12-mm × 12-mm VQFN package

separates electrical and thermal paths for lowest

power loop inductance

2 Applications

• Switch-mode power converters

• Merchant network and server PSU

• Merchant telecom rectifiers

• Solar inverters and industrial motor drives

• Uninterruptable power supplies

3 Description

The LMG3522R030 GaN FET with integrated driver

and protections is targeting switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG3522R030 integrates a silicon driver that

enables switching speed up to 150 V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20 V/ns to 150 V/ns,

which can be used to actively control EMI and

optimize switching performance.

Advanced power management features include digital

temperature reporting and fault detection. The

temperature of the GaN FET is reported through

a variable duty cycle PWM output, which simplifies

managing device loading. Faults reported include

overtemperature, overcurrent, and UVLO monitoring.