1 Features

• Qualified for JEDEC JEP180 for hard-switching

topologies

• 600-V GaN-on-Si FET with Integrated gate driver

– Integrated high precision gate bias voltage

– 200-V/ns CMTI

– 3.6-MHz switching frequency

– 20-V/ns to 150-V/ns slew rate for optimization

of switching performance and EMI mitigation

– Operates from 7.5-V to 18-V supply

• Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100-ns response

– Withstands 720-V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

• Advanced power management

– Digital temperature PWM output

– Ideal diode mode reduces third-quadrant losses

in LMG3425R050

2 Applications

• High density industrial power supplies

• Solar inverters and industrial motor drives

• Uninterruptable power supplies

• Merchant network and server PSU

• Merchant telecom rectifiers

3 Description

The LMG342xR050 GaN FET with integrated driver

and protection enables designers to achieve new

levels of power density and efficiency in power

electronics systems.

The LMG342xR050 integrates a silicon driver that

enables switching speed up to 150 V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20 V/ns to 150 V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3425R050

includes ideal diode mode, which reduces thirdquadrant

losses by enabling adaptive dead-time

control.

Advanced power management features include digital

temperature reporting and fault detection. The

temperature of the GaN FET is reported through

a variable duty cycle PWM output, which simplifies

managing device loading. Faults reported include

overtemperature, overcurrent, and UVLO monitoring.

LMG3425R050RQZT属于集成电路（IC） > 全半桥驱动器。美国德州仪器公司制造生产的LMG3425R050RQZT全半桥驱动器器件属于电桥驱动器电源管理集成电路 (PMIC) 系列，包含两个或多个功率晶体管，以及在外部器件控制下将其用作开关所需的电路。这些晶体管通常在内部配置为成对串联连接（称为半桥），因而任意指定晶体管对之间的结点都可以连接至两个电源轨中的任一个。这类器件常用于将控制器件（如微控制器）提供的低电平信号转换为操作执行器（如步进电机或无刷电机）所需的较大功率信号。