具有集成驱动器、保护和温度报告功能以及理想二极管模 式的汽车类 650V、30mΩ GaN FET

The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.\n\nThe LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias re • AEC-Q100 qualified for automotive applications \n• Qualified for JEDEC JEP180 for hard-switching topologies\n• Integrated high precision gate bias voltage\n• 2.2-MHz switching frequency\n• Operates from +12-V unregulated supply\n• Robust protection \n• Advanced power management \n• Ideal diode mod;

TI

德州仪器

LMG352xR030-Q1 650-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

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TI

德州仪器

QFM9

TI/德州仪器

上传：深圳市胜彬电子有限公司

HIT

上传：飞利飞科技有限公司

HIT

上传：飞利飞科技有限公司