LMG3525R030-Q1中文资料具有集成驱动器、保护和温度报告功能以及理想二极管模 式的汽车类 650V、30mΩ GaN FET数据手册TI规格书

描述 Description

The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

特性 Features

• AEC-Q100 qualified for automotive applications
• Qualified for JEDEC JEP180 for hard-switching topologies
• Integrated high precision gate bias voltage
• 2.2-MHz switching frequency
• Operates from +12-V unregulated supply
• Robust protection
• Advanced power management
• Ideal diode mode reduces third-quadrant losses in LMG3525R030-Q1
• Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance