LMG2650中文资料具有集成驱动器、保护和电流检测功能的 650V、95mΩ GaN 半桥数据手册TI规格书
LMG2650规格书详情
描述 Description
The LMG2650 is a 650V 95mΩ GaN power-FET half bridge. The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2650 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.
特性 Features
650V GaN power-FET half bridge
95mΩ low-side and high-side GaN FETs
Integrated gate drivers with <100ns low propagation delays
Programmable turn-on slew rate control
Current-sense emulation with high-bandwidth and high accuracy
Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
Low-side (INL) / high-side (INH) gate-drive interlock
High-side (INH) gate-drive signal level shifter
Smart-switched bootstrap diode function
High-side start up : <8µs
Low-side / high-side cycle-by-cycle overcurrent protection
Overtemperature protection
AUX idle quiescent current: 250µA
AUX standby quiescent current: 50µA
BST idle quiescent current: 85µA
8x6 mm QFN package with dual thermal pads
技术参数
- 制造商编号
:LMG2650
- 生产厂家
:TI
- RDS(on) (mΩ)
:95
- ID (max) (A)
:9.7
- Features
:Bottom-side cooled
- Rating
:Catalog
- Operating temperature range (°C)
:-40 to 125
- 封装
:UNKNOWN (RFB)
- 引脚
:19
- 尺寸
:See data sheet
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI/德州仪器 |
24+ |
VQFN-32 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TI/德州仪器 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
TI/德州仪器 |
2450+ |
VQFN(RWH)32 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
TI/德州仪器 |
23+ |
32-VQFN |
4261 |
原装正品代理渠道价格优势 |
询价 | ||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
TI/德州仪器 |
22+ |
QFN-32 |
18000 |
原装正品 |
询价 | ||
TI/德州仪器 |
25+ |
VQFN-32 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
VIS |
24+ |
32 |
询价 |