LMG1025-Q1中文资料适用于窄脉冲应用、具有 5V UVLO 的汽车类 7A/5A 单通道低侧栅极驱动器数据手册TI规格书

描述 Description

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25-ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300-ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9-ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

特性 Features

• AEC-Q100 grade 1 qualified
• 2.6-ns typical rising propagation delay
• 300-ps typical pulse distortion
• 650-ps typical rise time (220-pF load)
• 2-mm x 2-mm QFN package
• UVLO and over-temperature protection
• Single 5-V supply voltage