LMG2100R026中文资料100V 2.6mΩ 半桥氮化镓 (GaN) 功率级数据手册TI规格书

描述 Description

The LMG2100R026 device is a 93V continuous, 100V pulsed, 53A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the two GaN FETs are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R026 device is available in a 7.0mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

特性 Features

• Integrated half-bridge GaN FETs and driver
• 93V continuous, 100V pulsed voltage rating
• Package optimized for easy PCB layout
• High slew rate switching with low ringing
• 5V external bias power supply
• Supports 3.3V and 5V input logic levels
• Gate driver capable of up to 10MHz switching
• Excellent propagation delay (33ns typical) and matching (2ns typical)
• Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
• Supply rail undervoltage for lockout protection
• Low power consumption
• Exposed top QFN package for top-side cooling
• Large GND pad for bottom-side cooling