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LMG2656数据手册TI中文资料规格书

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厂商型号

LMG2656

功能描述

具有集成驱动器、保护和电流检测功能的 650V、230mΩ GaN 半桥

制造商

TI Texas Instruments

中文名称

德州仪器 美国德州仪器公司

数据手册

下载地址下载地址二

更新时间

2025-8-8 10:02:00

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LMG2656规格书详情

描述 Description

The LMG2656 is a 650V 230mΩ GaN power-FET half bridge. The LMG2656 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to PCB power ground.

The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2656 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.

特性 Features

650V GaN power-FET half bridge

230mΩ low-side and high-side GaN FETs

Integrated gate drivers with <100ns low propagation delays

Programmable turn-on slew rate control

Current-sense emulation with high-bandwidth and high accuracy

Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins

Low-side (INL) / high-side (INH) gate-drive interlock

High-side (INH) gate-drive signal level shifter

Smart-switched bootstrap diode function

High-side start up: <8µs

Low-side / high-side cycle-by-cycle overcurrent protection

Overtemperature protection

AUX idle quiescent current: 250µA

AUX standby quiescent current: 50µA

BST idle quiescent current: 70µA

8mm × 6mm QFN package with dual thermal pads

技术参数

  • 制造商编号

    :LMG2656

  • 生产厂家

    :TI

  • RDS(on) (mΩ)

    :230

  • ID (max) (A)

    :3.6

  • Features

    :Bottom-side cooled

  • Rating

    :Catalog

  • Operating temperature range (°C)

    :-40 to 125

  • 封装

    :VQFN (RFB)

  • 引脚

    :19

  • 尺寸

    :48 mm² 8 x 6

供应商 型号 品牌 批号 封装 库存 备注 价格
VIS
24+
32
询价
TI/德州仪器
25+
VQFN-32
8880
原装认准芯泽盛世!
询价
TI(德州仪器)
2024+
N/A
500000
诚信服务,绝对原装原盘
询价
TI/德州仪器
23+
VQFN-32
9990
只有原装
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI/德州仪器
25+
32-VQFN
65248
百分百原装现货 实单必成
询价
TI/德州仪器
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TI
22+
32-VQFN
5000
全新原装,力挺实单
询价
TI/德州仪器
22+
QFN-32
18000
原装正品
询价