LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.17217 Mbytes 页数：28 Pages

TI

德州仪器

LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.05999 Mbytes 页数：25 Pages

TI

德州仪器

丝印：LMG3612；Package：VQFN；LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.05999 Mbytes 页数：25 Pages

TI

德州仪器

丝印：LMG3612NNNNC；Package：VQFN；LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.17217 Mbytes 页数：28 Pages

TI

德州仪器

丝印：LMG3612NNNNC；Package：VQFN；LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.17217 Mbytes 页数：28 Pages

TI

德州仪器

丝印：LMG3612NNNNC；Package：VQFN；LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.17217 Mbytes 页数：28 Pages

TI

德州仪器

具有集成驱动器和保护功能的 650V 120mΩ GaN FET

The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.\n\nProgrammable turn-on slew rates provide EMI and ringing control. \n • 650-V 120-mΩ GaN power FET\n• Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control\n• Overtemperature protection with FLT pin reporting\n• AUX quiescent current: 55 µA\n• Maximum supply and input logic pin voltage: 26 V\n• 8 mm × 5.3 mm QFN package with therm;

TI

德州仪器