LMG3612REQR中文资料德州仪器数据手册PDF规格书

1 Features

• 650-V 120-mΩ GaN power FET

• Integrated gate driver with low propagation delays

and adjustable turn-on slew-rate control

• Overtemperature protection with FLT pin reporting

• AUX quiescent current: 55 μA

• Maximum supply and input logic pin voltage: 26 V

• 8 mm × 5.3 mm QFN package with thermal pad

2 Applications

• AC/DC adapters and chargers

• AC/DC USB wall outlet power supplies

• AC/DC auxiliary power supplies

• Television power supplies

• Mobile wall charger design

• USB wall power outlet

• Auxiliary-power supplies

• SMPS power supply for TV

• LED Power Supply

3 Description

The LMG3612 is a 650-V 120-mΩ GaN power FET

intended for switch-mode power-supply applications.

The LMG3612 simplifies design and reduces

component count by integrating the GaN FET and

gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and

ringing control.

The LMG3612 supports converter light-load efficiency

requirements and burst-mode operation with low

quiescent currents and fast start-up times. Protection

features include under-voltage lockout (UVLO)

and overtemperature protection. Overtemperature

protection is reported with the open-drain FLT pin.