丝印：LMG3612；Package：VQFN；LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.05999 Mbytes 页数：25 Pages

TI

德州仪器

丝印：LMG3612；Package：VQFN；LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.05999 Mbytes 页数：25 Pages

TI

德州仪器

LMG3612 650-V 120-mΩ GaN FET With Integrated Driver

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.05999 Mbytes 页数：25 Pages

TI

德州仪器