LMG3624 650-V 170-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 170-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.33941 Mbytes 页数：30 Pages

TI

德州仪器

LMG3624 650V 170mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650V 170mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting •

文件：1.4054 Mbytes 页数：31 Pages

TI

德州仪器

LMG3624 700V, 155mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • GaN power FET: 700V, 155mΩ, • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.52465 Mbytes 页数：36 Pages

TI

德州仪器

丝印：LMG3624NNNNC；Package：VQFN(REQ)；LMG3624 700V, 155mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • GaN power FET: 700V, 155mΩ, • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.52465 Mbytes 页数：36 Pages

TI

德州仪器

丝印：LMG3624NNNNC；Package：VQFN；LMG3624 650V 170mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650V 170mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting •

文件：1.4054 Mbytes 页数：31 Pages

TI

德州仪器

丝印：LMG3624NNNNC；Package：VQFN(REQ)；LMG3624 700V, 155mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • GaN power FET: 700V, 155mΩ, • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.52465 Mbytes 页数：36 Pages

TI

德州仪器

丝印：LMG3624YNNNNC；Package：VQFN(REQ)；LMG3624 700V, 155mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • GaN power FET: 700V, 155mΩ, • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.52465 Mbytes 页数：36 Pages

TI

德州仪器

丝印：LMG3624NNNNC；Package：VQFN(REQ)；LMG3624 700V, 155mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • GaN power FET: 700V, 155mΩ, • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.52465 Mbytes 页数：36 Pages

TI

德州仪器

具有集成驱动器、保护和电流检测功能的 650V 170mΩ GaN FET

TI

德州仪器

LMG3624 650V 170mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650V 170mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting •

文件：1.4054 Mbytes 页数：31 Pages

TI

德州仪器