Medium Power Transistor(-32V, -0.5A)

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：126.66 Kbytes 页数：4 Pages

LRC

乐山无线电

Medium Power Transistor(-32V, -0.5A)

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：126.66 Kbytes 页数：4 Pages

LRC

乐山无线电

Medium Power Transistor(-32V, -0.5A)

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：126.66 Kbytes 页数：4 Pages

LRC

乐山无线电

Medium Power Transistor(-32V, -0.5A)

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：126.66 Kbytes 页数：4 Pages

LRC

乐山无线电

Medium Power Transistor Epitaxial planar type PNP silicon transistor

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：168.31 Kbytes 页数：4 Pages

LRC

乐山无线电

Medium Power Transistor(-32V, -0.5A)

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：126.66 Kbytes 页数：4 Pages

LRC

乐山无线电

Medium Power Transistor Epitaxial planar type PNP silicon transistor

Features 1) Large IC. ICMax. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish

文件：168.31 Kbytes 页数：4 Pages

LRC

乐山无线电

General Purpose Transistor Super mini package for easy mounting

DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor,it is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @ I c = - 1 0 0 m A , I B = - 1 0 m A ) ●Excellent linearity of DC forward curr

文件：819.06 Kbytes 页数：3 Pages

LRC

乐山无线电

General Purpose Transistor Super mini package for easy mounting

DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor,it is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @ I c = - 1 0 0 m A , I B = - 1 0 m A ) ●Excellent linearity of DC forward curr

文件：819.06 Kbytes 页数：3 Pages

LRC

乐山无线电

General Purpose Transistor

DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas

文件：1.08744 Mbytes 页数：3 Pages

LRC

乐山无线电