General Purpose Transistor

DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas

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General Purpose Transistor

DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas

文件：1.08744 Mbytes 页数：3 Pages

LRC

乐山无线电

General Purpose Transistor

DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas

文件：1.08744 Mbytes 页数：3 Pages

LRC

乐山无线电

General Purpose Transistor

DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas

文件：1.08744 Mbytes 页数：3 Pages

LRC

乐山无线电

General Purpose Transistor

DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas

文件：1.08744 Mbytes 页数：3 Pages

LRC

乐山无线电

PNP Silicon General Purpose Amplifier Transistor

PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High h

文件：296.36 Kbytes 页数：5 Pages

LRC

乐山无线电

PNP Silicon General Purpose Amplifier Transistor

PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High h

文件：296.36 Kbytes 页数：5 Pages

LRC

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Low frequency transistor

Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = −200mA / IB = −10mA 3) We declare

文件：107.03 Kbytes 页数：3 Pages

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Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = í0.8A. ● Epitaxial planar type. ● NPN complement: L2SD1781K ● Pb-Free Package is available.

文件：89.04 Kbytes 页数：3 Pages

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乐山无线电

Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = í0.8A. ● Epitaxial planar type. ● NPN complement: L2SD1781K ● Pb-Free Package is available.

文件：89.04 Kbytes 页数：3 Pages

LRC

乐山无线电