High-Frequency Amplifier Transistor

High-Frequency Amplifier Transistor S- Prefix for Automotive and Other Applications Requiring Unique Site We declare that the material of product compliance with RoHS requirements. and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

文件：153.25 Kbytes 页数：2 Pages

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High-Frequency Amplifier Transistor Small Mini Mold Package

DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirem

文件：175.94 Kbytes 页数：5 Pages

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乐山无线电

High-Frequency Amplifier Transistor Small Mini Mold Package

DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirem

文件：175.94 Kbytes 页数：5 Pages

LRC

乐山无线电

High-Frequency Amplifier Transistor High gain,low noise

Features 1. High gain bandwidth product.(Typ.fT=8.0GHz) 2. High gain,low noise 3. Can operate at low voltage 4. We declare that the material of product compliance with RoHS requirements.

文件：1.46913 Mbytes 页数：3 Pages

LRC

乐山无线电

High-Frequency Amplifier Transistor High gain,low noise

Features 1. High gain bandwidth product.(Typ.fT=8.0GHz) 2. High gain,low noise 3. Can operate at low voltage 4. We declare that the material of product compliance with RoHS requirements.

文件：1.46913 Mbytes 页数：3 Pages

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乐山无线电

High-Frequency Amplifier Transistor Can operate at low voltage

Features 1. High gain bandwidth product.(Typ.fT=8.0GHz) 2. High gain,low noise 3. Can operate at low voltage 4. We declare that the material of product compliance with RoHS requirements. 5. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen

文件：2.20315 Mbytes 页数：3 Pages

LRC

乐山无线电

High-Frequency Amplifier Transistor Can operate at low voltage

Features 1. High gain bandwidth product.(Typ.fT=8.0GHz) 2. High gain,low noise 3. Can operate at low voltage 4. We declare that the material of product compliance with RoHS requirements. 5. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requiremen

文件：2.20315 Mbytes 页数：3 Pages

LRC

乐山无线电

NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space

文件：336.35 Kbytes 页数：5 Pages

LRC

乐山无线电

NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space

文件：336.35 Kbytes 页数：5 Pages

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乐山无线电

Medium Power Transistor(32V, 0.8A)

Features 1) Very low VCE(sat). VCE(sat)

文件：94.95 Kbytes 页数：4 Pages

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