IKWH75N65EH7

Marking：K75EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=75A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

IKY75N120CH7

Marking：K75MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKZA75N120CH7

Marking：K75MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKZA75N65EH7

Marking：K75EEH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=75A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

NCS20072DTBR2G

Marking：K72；Package：TSSOP-8；Operational Amplifier, Railto-Rail Output, 3 MHz BW

TheNCx2007xseriesoperationalamplifiersproviderail−to−rail outputoperation,3MHzbandwidth,andareavailableinsingle,dual, andquadconfigurations.Rail−to−railoperationenablestheuserto makeoptimaluseoftheentiresupplyvoltagerangewhiletaking advantageof3MHzbandwidt

NCV20072DTBR2G

Marking：K72；Package：TSSOP-8；Operational Amplifier, Railto-Rail Output, 3 MHz BW

TheNCx2007xseriesoperationalamplifiersproviderail−to−rail outputoperation,3MHzbandwidth,andareavailableinsingle,dual, andquadconfigurations.Rail−to−railoperationenablestheuserto makeoptimaluseoftheentiresupplyvoltagerangewhiletaking advantageof3MHzbandwidt

RMA35N50ES5

Marking：K72；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=50V,ID=0.35A RDS(ON)2KV

TK750A60F

Marking：K750A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.62Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=1mA)

TK7A60W5

Marking：K7A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators •MotorDrivers Features (1)Fastreverserecoverytime:trr=75ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.54Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3

TK7A65W

Marking：K7A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.64Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.25mA)