2N7002X

Marking：K72；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate MOSFETS

FEATURES HighdensitycelldesignforlowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability APPLICATION LoadSwitchforPortableDevices DC/DCConverter

BAS70WS

Marking：K73；70mA Surface Mount Small Signal Diodes

■Features •Lowcurrentrectificationandhighspeedswitching. •Smallsurfacemounttype. •Upto70mAcurrentcapability. •Lowforwardvoltagedrop(VF=1.00Vtyp.@15mA) •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-freepart,ex.BAS70WSG. •Le

BAS70WS

Marking：K73；Package：SOD-323；Low-Turn-on Volatage, Fast Swithing

FEATURES •LowTurn-onVoltage •FastSwitching •PNJunctionGuardforTransientandESDProtection

BAT750

Marking：K77；Package：SOT-23；Schottky Barrier Diode

Features ◇Highconductance. ◇Verylowforwardvoltagedrop. ◇ForuseinDC-DCconverter,PCMCIA, andmobiletelecommunicationsappilication. Applications ◇0.75Surfacemountschottkybarrierrectifier.

BS870Q-7-F

Marking：K70；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCap

DMN601DWKQ-7

Marking：K7K；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

IKQ75N120CH7

Marking：K75MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKW75N120CH7

Marking：K75MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighsp

IKW75N60T

Marking：K75T60；Package：PG-TO-247-3-21；Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

LowLossDuoPack:IGBTinTRENCHSTOP™andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ●VerylowVCE(sat)1.5V(typ.) ●MaximumJunctionTemperature175°C ●Shortcircuitwithstandtime5s ●PositivetemperaturecoefficientinVCE(sat) ●verytigh

IKW75N65RH5

Marking：K75ERH5；Package：PG-TO247-3；CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode

Features •VCE=650V •IC=75A •Ultra-lowswitchinglossesduetothecombinationofTRENCHSTOPTM5andCoolSiCTM technology •Benchmarkefficiencyinhardswitchingtopologies •Plug-and-playreplacementofpuresilicondevices •MaximumjunctiontemperatureTvjmax=175°C •Qualifie