丝印：K4E；Package：DFN8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：K4E；Package：L-TOGL；MOSFETs Silicon N-channel MOS

Applications • Automotive • Switching Voltage Regulators • Motor Drivers • DC-DC Converters Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to

文件：629.61 Kbytes 页数：10 Pages

TOSHIBA

东芝

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5

文件：553.93 Kbytes 页数：35 Pages

Samsung

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5

文件：553.93 Kbytes 页数：35 Pages

Samsung

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5

文件：553.93 Kbytes 页数：35 Pages

Samsung

三星

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：256.75 Kbytes 页数：21 Pages

Samsung

三星

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：256.75 Kbytes 页数：21 Pages

Samsung

三星

2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：257.04 Kbytes 页数：21 Pages

Samsung

三星

2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：257.04 Kbytes 页数：21 Pages

Samsung

三星

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：256.75 Kbytes 页数：21 Pages

Samsung

三星