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型号	下载订购	功能描述	制造商上传企业	LOGO
K4E151611D	文件：553.93 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 文件：553.93 Kbytes 页数：35 Pages	Samsung 三星	Samsung
K4E151611D	文件：300 bytes Page：1 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out	Samsung 三星	Samsung
K4E151611D-T	文件：300 bytes Page：1 Pages	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.	Samsung 三星	Samsung
K4E151611	文件：553.93 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 文件：553.93 Kbytes 页数：35 Pages	Samsung 三星	Samsung

更多K4E151611D供应商更新时间2025-10-11 17:49:00