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K4E660812C

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E660812E

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E660812E-JC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E660812E-JCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E660812E-TC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E660812E-TCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4E660812C

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

供应商型号品牌批号封装库存备注价格
SAMSUNG
6000
面议
19
SOP
询价
SAMSUNG/三星
25+
TSOP
880000
明嘉莱只做原装正品现货
询价
SAMSUNG
23+
TSOP
8000
只做原装现货
询价
SAMSUNG
23+
TSOP
7000
询价
SEC
TSOP32
8
全新原装进口自己库存优势
询价
SEC
17+
TSOP32
9988
只做原装进口,自己库存
询价
SEC
23+
TSOP32
20000
全新原装假一赔十
询价
SAMSUNG/三星
23+
TSOP
5000
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询价
更多K4E660812C供应商 更新时间2025-7-28 10:15:00