4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

文件：885.22 Kbytes 页数：36 Pages

Samsung

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

文件：884.02 Kbytes 页数：36 Pages

Samsung

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

文件：884.02 Kbytes 页数：36 Pages

Samsung

三星

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

文件：884.02 Kbytes 页数：36 Pages

Samsung

三星