K4E661612C规格书供应价格三星Samsung-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
K4E661612C	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-L	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-L45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-L50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-L60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-T	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-T45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung

详细参数

型号：
K4E661612C
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	K4E661612C-TP50	SAMSUNG	TSOP50	0070+	1156	全新原装进口自己库存优势	询价
深圳市星佑电子有限公司	K4E661612C-TL50	SAM	06+	TSOP	1000	自己公司全新库存绝对有货	询价
深圳市一线半导体有限公司	K4E661612C-GL60	SAMSUNG	24+	BGA	427		询价
深圳市鹏和科技有限公司	K4E661612C-TP50	SAMSUNG	24+	TSOP50	5000	只做原装公司现货	询价
上海专毅电子科技有限公司	K4E661612C-TP50	SAMSUNG	17+	TSOP50	9988	只做原装进口,自己库存	询价
深圳市佳鑫美电子科技有限公司	K4E661612C-GL60	SAMSUNG	25+	BGA	2140	全新原装!现货特价供应	询价
艾睿（深圳）半导体有限公司	K4E661612C-TP50	SAMSUNG/三星	2447	TSOP	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	K4E661612C-GL60	SAMSUNG/三星	23+	BGA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	K4E661612C-TP50	SAMSUNG/三星	21+	TSOP50	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	K4E661612C-GL60	SAMSUNG/三星	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

更多K4E661612C供应商更新时间2025-12-20 9:31:00

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