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K4E661612C-T

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-T45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-T50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-T60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-TC45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-TC50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-TC60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-TL45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

K4E661612C-TL50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半导体

供应商型号品牌批号封装库存备注价格
SAM
23+
TSOP
35890
询价
SAMSUNG
TSOP50
0070+
1156
全新原装进口自己库存优势
询价
SAMSUNG
24+
TSOP
8000
询价
SAM
06+
TSOP
1000
自己公司全新库存绝对有货
询价
SAMSUNG
24+
TSOP50
5000
只做原装公司现货
询价
SAMSUNG
17+
TSOP50
9988
只做原装进口,自己库存
询价
SAMSANG
19+
TSOP50
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
1844+
TSOP
6528
只做原装正品假一赔十为客户做到零风险!!
询价
SAMSUNG
6000
面议
19
TSOP
询价
SAMSUNG/三星
2447
TSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多K4E661612C-T供应商 更新时间2025-5-5 20:08:00