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型号	下载订购	功能描述	制造商上传企业	LOGO
K4E660812E-JCSLASHL	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E660812E-TC/L	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E660812E-TCSLASHL	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E660812B	文件：416.71 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：416.71 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E660812C	文件：416.25 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：416.25 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E660812E	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	K4E660812E-TC50	SAMSUNG	6000	面议	19	TSOP	询价
贸泽芯城（深圳）电子科技有限公司	K4E661611C-TC50	SAMSUNG/三星	23+	TSOP	5000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市昊创电子有限公司	K4E6616120-TC60	SAN		SSOP	2100	优势库存	询价
深圳市一线半导体有限公司	K4E661612B-GL60	SAMSUNG	24+	BGA	1172		询价
深圳市佳鑫美电子科技有限公司	K4E661612B-GL60	SAMSUNG	25+	BGA	2140	全新原装!现货特价供应	询价
深圳市华来深电子有限公司	K4E661612B-GL60	SAMSUNG	23+	BGA	8560	受权代理!全新原装现货特价热卖!	询价
艾睿（深圳）半导体有限公司	K4E661612B-GL60	SAMSUNG/三星	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	K4E661612B-GL60	SAMSUNG/三星	23+	BGA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	K4E661612B-GL60	SAMSUNG/三星	21+	BGA	10000	原装现货假一罚十	询价
深圳市胜彬电子有限公司	K4E661612B-GL60	SAMSUNG	22+	BGA	8000	原装正品支持实单	询价

更多K4E660812E-JCSLASHL供应商更新时间2025-9-26 17:21:00

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