K4E660812B中文资料三星数据手册PDF规格书

DESCRIPTION

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family.

FEATURES

• Part Identification

- K4E660812B-JC/L(3.3V, 8K Ref., SOJ)

- K4E640812B-JC/L(3.3V, 4K Ref., SOJ)

- K4E660812B-TC/L(3.3V, 8K Ref., TSOP)

- K4E640812B-TC/L(3.3V, 4K Ref., TSOP)

• Active Power Dissipation

• Refresh Cycles

• Performance Range

• Extended Data Out Mode operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in Plastic SOJ and TSOP(II) packages

• +3.3V±0.3V power supply