K4E660412E-TP45中文资料三星数据手册PDF规格书

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Part Identification

- K4E660412E-JI/P(3.3V, 8K Ref., SOJ)

- K4E640412E-JI/P(3.3V, 4K Ref., SOJ)

- K4E660412E-TI/P(3.3V, 8K Ref., TSOP)

- K4E640412E-TI/P(3.3V, 4K Ref., TSOP)