K4E661612B规格书应用电路供应商报价三星-114ic电子网

首页 >K4E661612B>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
K4E661612B	文件：885.22 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：885.22 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612B-L	文件：885.22 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：885.22 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612B-TC	文件：885.22 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：885.22 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-L	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E661612C-T	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung

详细参数

型号：
K4E661612B
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	K4E661612B-GL60	SAMSUNG	24+	BGA	1172		询价
深圳市佳鑫美电子科技有限公司	K4E661612B-GL60	SAMSUNG	25+	BGA	2140	全新原装!现货特价供应	询价
深圳市华来深电子有限公司	K4E661612B-GL60	SAMSUNG	23+	BGA	8560	受权代理!全新原装现货特价热卖!	询价
深圳市近平电子有限公司	K4E661612B-JC60		6000	面议	19	DIP/SMD	询价
艾睿（深圳）半导体有限公司	K4E661612B-GL60	SAMSUNG/三星	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	K4E661612B-GL60	SAMSUNG/三星	23+	BGA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	K4E661612B-GL60	SAMSUNG/三星	21+	BGA	10000	原装现货假一罚十	询价
深圳市胜彬电子有限公司	K4E661612B-GL60	SAMSUNG	22+	BGA	8000	原装正品支持实单	询价
深圳庞田科技有限公司	K4E661612B-GL60	SAMSUNG	2023+环保现货	BGA	4425	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
上海凌岳电子科技有限公司（上海涵恩科技）	K4E661612B-GL60	SAMSUNG	2023+	BGA	3000	进口原装现货	询价

更多K4E661612B供应商更新时间2025-10-8 10:03:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号