K4E661612B-L中文资料三星数据手册PDF规格书

DESCRIPTION

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Part Identification

- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)

- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)

• Active Power Dissipation

• Refresh Cycles

• Performance Range

• Extended Data Out Mode operation

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• Self-refresh capability (L-ver only)

• LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in Plastic TSOP(II) packages

• +3.3V±0.3V power supply