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K4E661612B中文资料PDF规格书
K4E661612B规格书详情
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply
产品属性
- 型号:
K4E661612B
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
4M x 16bit CMOS Dynamic RAM with Extended Data Out
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG |
22+ |
BGA |
2140 |
全新原装!现货特价供应 |
询价 | ||
SAMSUNG/三星 |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG |
23+ |
BGA |
8000 |
只做原装现货 |
询价 | ||
SAMSUNG |
2023+ |
BGA |
3000 |
进口原装现货 |
询价 | ||
SAMSUNG/三星 |
19+ |
BGA |
12501 |
进口原装现货 |
询价 | ||
SAMSUNG |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SAMSUNG/三星 |
BGA |
68900 |
原包原标签100%进口原装常备现货! |
询价 |