K4E151611D-T资料使用说明书贸易商三星-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
K4E151611D-T	文件：300 bytes Page：1 Pages	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.	Samsung 三星	Samsung
K4E151611	文件：553.93 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 文件：553.93 Kbytes 页数：35 Pages	Samsung 三星	Samsung
K4E151611D	文件：553.93 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 文件：553.93 Kbytes 页数：35 Pages	Samsung 三星	Samsung
K4E4E164EB-EGCE	文件：0 bytes Page：0 Pages	SAMSUNG/三星 BGA	SAMSUNG/三星上传：深圳庞田科技有限公司	SAMSUNG/三星
K4E4E164EE-SGCE	文件：0 bytes Page：0 Pages	SAMSUNG/三星 FBGA	SAMSUNG/三星上传：深圳庞田科技有限公司	SAMSUNG/三星

更多K4E151611D-T供应商更新时间2025-10-13 10:51:00