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型号	下载订购	功能描述	制造商上传企业	LOGO
K4E641612C-60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-L	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-T	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-T45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-T50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-T60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-TC	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-TC45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-TC50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG
K4E641612C-TC60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	SAMSUNG 三星	SAMSUNG

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亿联芯电子科技有限公司	XPQ1R004PB	Toshiba	23+	TO-247	3268	东芝全系列原厂正品现货	询价
深圳市纳睿斯电子科技有限公司	XPQR3004PB	TOSHIBA/东芝	25+		20000	原装现货,可追溯原厂渠道	询价
深圳和润天下电子科技有限公司	XPRESS1.00	ST/意法	QFP64	22+	6987	原装正品现货可开增值税发票	询价
深圳市创盛芯科技有限公司	XPRESS1.00	NA	25+	NA	18	全新原装正品支持含税	询价
深圳市英卓尔科技有限公司	XPRESS1.007SCR/OJJ	ST	20+	QFP	500	样品可出,优势库存欢迎实单	询价
深圳市威尔健半导体有限公司	XPRESS1.007SCR/OJJ	ST/意法	23+	QFP	50000	全新原装正品现货,支持订货	询价
深圳市博中泰实业有限公司	XPRESS1.007SCR/OJJ	ST/意法	24+	QFP64	60000	全新原装现货	询价
深圳市一线半导体有限公司	XPRESS200M	ATI	24+	BGA	500		询价
深圳市鹏顺微电子科技有限公司	XPRESSV7-LP330HE-GEN2	PLDA	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市昊创电子有限公司	XPRF	EMC	19+		3000	只做原装假一罚十	询价

更多K4E供应商更新时间2026-3-18 14:56:00

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