4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：256.75 Kbytes 页数：21 Pages

SAMSUNG

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2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：257.04 Kbytes 页数：21 Pages

SAMSUNG

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2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

文件：257.04 Kbytes 页数：21 Pages

SAMSUNG

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1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5

文件：553.93 Kbytes 页数：35 Pages

SAMSUNG

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1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5

文件：553.93 Kbytes 页数：35 Pages

SAMSUNG

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PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 页数：28 Pages

SAMSUNG

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PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 页数：28 Pages

SAMSUNG

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -50, or -60), package type (SOJ or TSOPII) are optional features of th

文件：418.25 Kbytes 页数：21 Pages

SAMSUNG

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -50, or -60), package type (SOJ or TSOPII) are optional features of th

文件：418.25 Kbytes 页数：21 Pages

SAMSUNG

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -50, or -60), package type (SOJ or TSOPII) are optional features of th

文件：418.25 Kbytes 页数：21 Pages

SAMSUNG

三星