K4E160811D中文资料三星数据手册PDF规格书

DESCRIPTION

This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer and personal computer.

FEATURES

• Part Identification

- K4E170811D-B(F) (5V, 4K Ref.)

- K4E160811D-B(F) (5V, 2K Ref.)

- K4E170812D-B(F) (3.3V, 4K Ref.)

- K4E160812D-B(F) (3.3V, 2K Ref.)

• Active Power Dissipation

• Refresh Cycles

• Performance Range

• Extended Data Out Mode operation (Fast page mode with Extended Data Out)

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10 power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)