2SK3046DS-3

Marking：K100；Package：SOT-23-3；N-Channel MOSFET

IKQ100N120CH7

Marking：K100MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=100A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packed

IKQ100N120CS7

Marking：K100MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=1200V •IC=100A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) •Shortcircuitruggedness8μs •Widerangeofdv/dtcontroll

IKWH100N65EH7

Marking：K100EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=100A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprod

IKY100N120CH7

Marking：K100MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=100A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packed