丝印：K110；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K110；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K110；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K110；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：K110A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.1 mΩ (typ.) (VGS = 10 V

文件：559.59 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K110A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：470.06 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K110E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.3 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.0 mΩ (typ.) (VGS = 10 V

文件：575.49 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K110E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：471.6 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：480.12 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K110Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：484.07 Kbytes 页数：10 Pages

TOSHIBA

东芝