丝印：K110E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：471.6 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 500V

Application ScopeSwitching Voltage Regulators\nPolarityN-ch\nGenerationDTMOSⅥ\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝

TOSHIBA/东芝
TO-220SIS

TOSHIBA/东芝

上传：深圳市鼎欣微电子有限公司

TOSHIBA/东芝
TO-220SIS

TOSHIBA/东芝

上传：深圳市鼎欣微电子有限公司

TOSHIBA
TO-220

TOSHIBA

东芝

上传：深圳市恒星亚创科技有限公司