丝印：K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

文件：480.12 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：DTMOSⅥ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Please contact us. Drain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 24 A \nPower Dissipation PD 190 W ;

Toshiba

东芝

N-Channel Enhancement Mode MOSFET

文件：236.47 Kbytes 页数：4 Pages

DACO

罡境电子

isc N-Channel MOSFET Transistor

文件：298.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel SuperFET짰 II FRFET짰 MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：1.21402 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体