功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，D2-PAK

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。SuperFET® II FRFET® MOSFET 集更快速、更耐用的固有体二极管性能与快速开关性能于一身，旨在实现更佳可靠性和效率，在谐振开关应用中尤其如此。SuperFET® II FRFET® 非常适合开关电源应用，如服务器/电信电源、光伏逆变器、FPD 电视电源、电脑电源、照明及工业电源应用。 •700 V @TJ= 150°C\n•典型值RDS(on)=96 mΩ（典型值）\n•超低栅极电荷（典型值Qg=98 nC）\n•低有效输出电容（典型值Coss(eff.)= 464 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：298.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel SuperFET짰 II FRFET짰 MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：1.21402 Mbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：371.17 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：331.49 Kbytes 页数：2 Pages

ISC

无锡固电