丝印：K115；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K115；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：519.25 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K115；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：K115A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.0

文件：497.86 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K115E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.02 mA

文件：507.61 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K115N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.0

文件：504.97 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K115U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.088 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.0

文件：527.27 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K115J；Package：SOF2-4J；Surface Mount Schottky Bridge Rectifiers

文件：957.82 Kbytes 页数：3 Pages

JUXING

广东钜兴电子

14 PIN dip 5.0 volt clock oscillator

文件：369.94 Kbytes 页数：2 Pages

MTRONPTI

14 pin DIP, 5.0 Volt, Clock Oscillator

文件：353.17 Kbytes 页数：2 Pages

MTRONPTI