丝印：K100MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 100 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed

文件：1.74533 Mbytes 页数：17 Pages

INFINEON

英飞凌

1200 V、100 A IGBT，带反并联二极管，采用 TO-247PLUS 4 引脚封装

采用 TO-247PLUS-4pin 封装技术的硬开关 1200 V、100 A TRENCHSTOP ™ IGBT7 H7 分立器件已经开发出来，以满足专注于脱碳的应用的需求，例如太阳能光伏、不间断电源和电池充电器。 • VCEsat 表现优异。\n• 快速开关行为\n • 低 EMI 辐射\n • 针对目标应用优化的二极管。\n• 低 Qrr\n • 低栅极电阻选择。可能\n • 出色的开关性能 (@>5 Ω)\n • 提供 175 °C 的 Tj(max);

Infineon

英飞凌

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 100 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed

文件：1.61856 Mbytes 页数：17 Pages

INFINEON

英飞凌