丝印：K10E；Package：SOT23-5；High bandwidth (30 MHz) low offset (200 μV) rail-to-rail 5 V op amp

Features • Gain bandwidth product 30 MHz, unity gain stable • Slew rate 20 V/μs • Low input bias current: 2 pA typ. • Low input voltage noise density 7 nV/√Hz @ 10 kHz • Wide supply voltage range: 2.0 V to 5.5 V • Rail-to-rail input and output • Extended temperature range: -40 °C to +125 °C

文件：8.77229 Mbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体

丝印：K10E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA)

文件：425.38 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K10EET6；Package：PG-TO220-3FP；IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

文件：2.05423 Mbytes 页数：16 Pages

Infineon

英飞凌